This is the complete Solution Manual for Radio Frequency Integrated Circuits and Systems, 2nd Edition, authored by Hooman Darabi. The manual presents selected worked solutions to the problem sets for all 12 chapters of the textbook, covering practical applications of RF integrated circuit and system concepts, detailed analysis of key ideas, and in some cases new concepts. Chapter 1 covers fundamental electromagnetics and circuit theory, including spherical and parallel-plate capacitance, dielectrics, Ohm's law and leakage conductance, Ampere's law and superconductors, internal and external inductance of wires and bondwires, Faraday's experiment, series RLC circuits, inductor switching, VCO gain dependence on frequency, Q of parallel RC/RL circuits, complex power and Tellegen's theorem, transmission line wave equations, spiral inductor design, and non-linear capacitance wave propagation. Chapter 2 covers Fourier transforms and Parseval's energy theorem, ladder network transfer functions, series input capacitance, Butterworth filter poles and maximal flatness, active gyrators, Hilbert transform impulse response, polyphase filters, comb filters, stationary random processes, autocorrelation, power spectral density, Chebyshev's inequality, random telegraph signals, FM modulation and demodulation, and PAPR. Chapter 3 covers inductance matrices, double-tuned circuits, parallel-series impedance transformation, Smith chart matching, LC matching networks, series RLC impedance plots, two-port Y and Z parameter relationships, stability conditions, optimum source and load admittance for maximum power gain, transmission line differential equations, low-loss propagation constants, and S-matrix conversions. Chapter 4 covers noise figure of source followers and common-gate LNAs, input-referred noise voltage, equivalent noise bandwidth of Butterworth filters, passive mixers, series-series feedback, Tellegen's theorem, energy conservation, insertion loss, Nyquist theorem and its dual, resistive network noise figures, thermal noise energy storage, cross-correlation for impulse response estimation, VCO phase noise, cascade noise figures, BJT noise, gm-C resonators, active gyrators, and noise circles on the Smith chart. Chapter 5 covers IIP2, IIP3, and 1dB compression of BJTs and FETs, feedback effects on nonlinearity, degenerated FETs, band-limited white noise, GSM receiver phase noise requirements, LNA noise figure, SFDR, blocker desensitization, ACLR, PAPR, duplexer isolation, and AM-PM conversion with Bessel series. Chapter 6 covers matching network transfer functions and noise, complementary shunt-feedback LNAs, common-gate LNA design with transformers, noise figure versus input reflection coefficient, resistive shunt feedback, cascode LNAs, and distributed gate resistance. Chapter 7 covers single-balanced and double-balanced active mixers, passive mixers, single-balanced mixers with active loads, limiter spectrum analysis, instantaneous transconductance, 6-phase and 3-phase mixers, IIP2 with RF-LO feedthrough, current-mode passive mixers, and op-amp based TIAs. Chapter 8 covers linear oscillator feedback analysis, amplitude of oscillation, negative-gm topologies, oscillator noise spectral density, amplitude and phase noise equality, Hartley and Colpitts oscillators, class C and class D operation, bias current injection efficiency, NMOS LC VCO design, and type-II PLL noise transfer functions. Chapter 9 covers LC matching power loss, class C efficiency, class B harmonic peaking, class D push-pull PAs, switching regulators, boost converters, class E amplifiers, IQ transmitter nonlinearity, source follower and common-source PA efficiency, dynamic gate biasing, envelope statistics, and Doherty amplifiers. Chapter 10 covers DAC effective number of bits, GSM receiver blocker analysis with high-side and low-side injection, image rejection, Weaver receivers, LTI systems with phase shift, M-phase mixer-first receivers, dual-conversion receivers, sliding IF, ADC requirements, IQ transmitter predistortion, and pulling in direct-conversion transmitters. Students can use this solution manual for homework support, exam preparation, problem-solving practice, and self-assessment in RF integrated circuit design, RF system design, and analog/RF engineering courses.
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@PROFDOCDIGITALLIBRARIES
Radio Frequency Integrated
Circuits and Systems 2nd
Edition
Solution Manual
BY
Hooman Darabi
,@PROFDOCDIGITALLIBRARIES
Solutions to Problem Sets
The selected solutions to all 12 chapters problem sets are presented in this manual. The problem
sets depict examples of practical applications of the concepts described in the book, more
detailed analysis of some of the ideas, or in some cases present a new concept.
Note that selected problems have been given answers already in the book.
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1 Chapter One
1. Using spherical coordinates, find the capacitance formed by two concentric spherical
conducting shells of radius a, and b. What is the capacitance of a metallic marble with a
diameter of 1cm in free space? Hint: let 𝑏 → ∞, thus, 𝐶 = 4𝜋𝜀𝜀0 𝑎 = 0.55𝑝𝐹.
Solution: Suppose the inner sphere has a surface charge density of +𝜌𝑆. The outer surface
charge density is negative, and proportionally smaller (by (𝑎/𝑏)2) to keep the total charge
the same.
-
+
+S - + a + -
b
+
-
From Gauss’s law:
�𝐷 ⋅ 𝑑𝑺𝑺 = 𝑄𝑄 = +𝜌𝑆4𝜋𝑎2
𝑆
Thus, inside the sphere (𝑎 ≤ 𝑟 ≤ 𝑏):
𝑎2
𝐷 = 𝜌𝑆
𝑎𝑟
𝑟2
Assuming a potential of 𝑉0 between the inner and outer surfaces, we have:
𝑎 2 1 1
𝑉0 = − � 1 𝜌𝑆 𝑎 𝑑𝑟 = 𝜌𝑆 𝑎2( − )
𝑏 𝜖𝜖 𝑟2 𝜖𝜖 𝑎 𝑏
Thus:
𝑄𝑄 𝜌𝑆4𝜋𝑎2
𝐶=𝑉 = = 4𝜋𝜖𝜖
𝜌𝑆 2 1 1 1 1
𝑎−𝑏
0 𝑎 ( − )
𝜖𝜖 𝑎 𝑏
1
In the case of a metallic marble, 𝑏 → ∞, and hence: 𝐶 = 4𝜋𝜀𝜀0 𝑎. Letting 𝜀𝜀0 = ×
36𝜋
10−9, and 𝑎 = 0.5𝑐𝑚, it yields 𝐶 = 5 𝑝𝐹 = 0.55𝑝𝐹.
9
2. Consider the parallel plate capacitor containing two different dielectrics. Find the total
capacitance as a function of the parameters shown in the figure.
, @PROFDOCDIGITALLIBRARIES
Area: A
1
d1
2
d2
Solution: Since in the boundary no charge exists (perfect insulator), the normal component
of the electric flux density has to be equal in each dielectric. That is:
𝐷𝟏𝟏 = 𝐷𝟐𝟐
Accordingly:
𝜖𝜖1 𝐸𝟏𝟏 = 𝜖𝜖2 𝐸𝟐𝟐
Assuming a surface charge density of +𝜌𝑆 for the top plate, and −𝜌𝑆 for the bottom plate, the
electric field (or flux has a component only in z direction, and we have:
𝐷𝟏𝟏 = 𝐷𝟐𝟐 = −𝜌𝑆 𝑎𝒛𝒛
If the potential between the top ad bottom plates is 𝑉0, based on the line integral we obtain:
𝑑1+𝑑2 𝑑2
−𝜌𝑆 𝑑1+𝑑2 −𝜌
𝑆 𝜌𝑆 𝜌𝑆
𝑉0 = − � 𝐸. 𝑑𝒛𝒛 = − � 𝜖𝜖 𝑑𝑧 − � 𝜖𝜖 𝑑𝑧 = 𝜖𝜖 𝑑1 + 𝜖𝜖 𝑑2
0 0 2 𝑑2 1 1 2
Since the total charge on each plate is: 𝑄𝑄 = 𝜌𝑆𝐴, the capacitance is found to be:
𝑄𝑄 𝐴
𝐶=𝑉 =𝑑 𝑑
0 1 2
𝜖𝜖1 + 𝜖𝜖2
which is analogous to two parallel capacitors.
3. What would be the capacitance of the structure in problem 2 if there were a third conductor
with zero thickness at the interface of the dielectrics? How would the electric field lines
look? How does the capacitance change if the spacing between the top and bottom plates are
kept the same, but the conductor thickness is not zero?