6/9/06
,1.2
B = 19.97 x 100.1997(2020−1960) = 14.5 x 1012 = 14.5 Tb/chip
1.3
(a)
B 19.97x100.1977(Y2 −1960) 0.1977(Y −Y ) 0.1977(Y −Y )
2
= 0.1977(Y1 −1960)
= 10 2 1
so 2 = 10 2 1
B1 19.97x10
log2
Y2 − Y1 = = 1.52 years
0.1977
log10
(b) Y2 − Y1 = = 5.06 years
0.1977
1.4
N = 1610x100.1548(
2020−1970)
= 8.85 x 1010 transistors/P
1.5
0.1548(Y2 −1970) 0.1548(Y −Y )
N2 1610x10
= = 10 2 1
(1 )
0.1548 Y −1970
N1 1610x10
log2
(a) Y2 − Y1 = = 1.95 years
0.1548
log10
(b) Y2 − Y1 = = 6.46 years
0.1548
−0.05806(2020−1970)
1.6 F = 8.00x10 m = 10 nm .
No, this distance corresponds to the diameter of only a few atoms. Also, the wavelength of the
radiation needed to expose such patterns during fabrication is represents a serious problem.
1.7
From Fig. 1.4, there are approximately 600 million transistors on a complex Pentium IV
microprocessor in 2004. From Prob. 1.4, the number of transistors/P will be 8.85 x 1010. in
2020. Thus there will be the equivalent of 8.85x1010/6x108 = 148 Pentium IV processors.
1-2 ©R. C. Jaeger & T. N. Blalock
6/9/06
,1.8 1.13 x 108W
6
(
P = 75x10 tubes )(1.5W tube)= 113 MW! I=
220V
= 511 kA!
1.9 D, D, A, A, D, A, A, D, A, D, A
1.10
10.24V 10.24V 10.24V
VLSB = = = 2.500 mV VMSB = = 5.120V
212 bits 4096bits 2
1001001001102 = 211 + 28 + 25 + 22 + 2 = 2342 10 VO = 2342(2.500mV )= 5.855 V
1.11
5V 5V = 19.53 mV 2.77V
VLSB = = and mV = 142 LSB
28 bits 256bits bit 19.53
bit
14210 = (128 + 8 + 4 + 2)10 = 100011102
1.12
2.5V 2.5V = 2.44 mV
VLSB = =
210 bits 1024 bits bit
2.5V
8 6
2
5
(
0101101101 = 2 + 2 + 2 + 2 + 2 + 2
3 2 0
) = 365 10
V = 365
O
= 0.891 V
10 1024
1.13
V =
10V
= 0.6104
mV
and
6.83V
(2 14
)
bits = 11191 bits
LSB
214 bits bit 10V
1119110 = (8192 + 2048 + 512 + 256 + 128 + 32 + 16 + 4 + 2 + 1)10
1119110 = 101011101101112
1.14
A 4 digit readout ranges from 0000 to 9999 and has a resolution of 1 part in 10,000. The
number of bits must satisfy 2B ≥ 10,000 where B is the number of bits. Here B = 14 bits.
1.15
V = 5.12V = 5.12V = 1.25 mV and V = (101110111011 )V VLSB
LSB 12 O 2 LSB
2 bits 4096 bits bit 2
O (
11 9 8 7 5 4 3
)
V = 2 + 2 + 2 + 2 + 2 + 2 + 2 + 2 + 1 1.25mV 0.0625V
10
VO = 3.754 0.000625 or 3.753V VO 3.755V
1-3
6/9/06
, 1.16
IB = dc component = 0.002 A, ib = signal component = 0.002 cos (1000t) A
1.17
VGS = 4 V, vgs = 0.5u(t-1) + 0.2 cos 2000 t Volts
1.18
vCE = [5 + 2 cos (5000t)] V
1.19
vDS = [5 + 2 sin (2500t) + 4 sin (1000t)] V
1.20
V = 10 V, R1 = 22 k, R2= 47 k and R3 = 180 k.
V
+ 1 -
R I2 I3
1
+
V R2 V R
2 3
-
22k
V = 10V 22k = 3.71 V
= 10V
1
(
22k+ 47k 180k )
22k+ 37.3k
37.3k
V = 10V = 6.29 V Checking : 6.29 + 3.71 = 10.0 V
2
22k+ 37.3k
I2 = I1 180k 10V 180k
47k+ 180k = 22k+ 37.3k 47k+ 180k = 134 A
I3 = I1 47k 10V 47k
47k+ 180k = 22k+ 37.3k 47k+ 180k = 34.9 A
10V
Checking : I1 = = 169A and I1 = I2 + I3
22k+ 37.3k
1-4 ©R. C. Jaeger & T. N. Blalock
6/9/06