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ECE 200 Test Review Exam questions and answers Graded A+ | latest update The heart of a typical MOS transistor used in a CMOS integrated circuit is a capacitor, which consists of a thin layer of oxide (silicon or hafnium oxide) sandwiched between meta
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ECE 200 Test Review Exam questions and answers Graded A+ | latest update The heart of a typical MOS transistor used in a CMOS integrated circuit is a capacitor, which consists of a thin layer of oxide (silicon or hafnium oxide) sandwiched between metal and silicon plates. In this problem we use SiO2 as the gate oxide. Suppose the surface area of a capacitor plate is 42 nm x 42 nm and the thickness of the oxide is 4 nm. Find the capacitance of the MOS capacitor in Farads. Your Answer should contain 4 significant figures.i.e. Your answer should be of the format X.XXXEY. The relative dielectric constant of silicon dioxide is 3.9 and the dielectric permittivity of free space is 8.85 x 10-12 F/m. - 1.522E-17
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