ITE 221 Final Exam Questions With Complete Solutions.

ITE 221 Final Exam Questions With Complete
Solutions

A |storage |device |consists |of |a |read/write |mechanism |and |a |storage |medium. |- |CORRECT |
ANSWER✔✔-True



The |____ |is |the |device |or |substance |that |actually |holds |data. |- |CORRECT |ANSWER✔✔-storage |
medium



____ |is |a |read-ahead |RAM |that |uses |the |same |clock |pulse |as |the |system |bus. |- |CORRECT |
ANSWER✔✔-Synchronous |DRAM



A |____ |device |isn't |restricted |to |any |specific |order |when |accessing |data. |- |CORRECT |
ANSWER✔✔-random |access



A |____ |is |a |CPU |cycle |spent |waiting |for |access |to |an |instruction |or |data. |- |CORRECT |
ANSWER✔✔-wait |state



A |storage |device |or |medium |is |____ |if |it |can't |hold |data |reliably |for |long |periods. |- |CORRECT |
ANSWER✔✔-volatile



Block |size |is |normally |stated |in |bytes |and |is |generally |the |same |between |storage |devices, |
especially |in |a |single |storage |device. |- |CORRECT |ANSWER✔✔-False



Capacitors |can |charge |and |discharge |much |faster |than |batteries. |- |CORRECT |ANSWER✔✔-True

,Cost |per |unit |decreases |as |an |access |method |moves |from |serial |to |random |to |parallel. |- |
CORRECT |ANSWER✔✔-False



Data |is |represented |in |the |CPU |as |____. |- |CORRECT |ANSWER✔✔-digital |electrical |signals



Memory |devices |comprised |of |semiconductors |and |other |forms |of |RAM |with |long-term |or |
permanent |data |retention |are |generically |known |as |____. |- |CORRECT |ANSWER✔✔-nonvolatile |
memory



Modern |computers |use |memory |implemented |with |____. |- |CORRECT |ANSWER✔✔-
semiconductors



Primary |storage |extends |the |limited |capacity |of |CPU |registers. |- |CORRECT |ANSWER✔✔-True



SRAM |has |higher |density |then |DRAM. |- |CORRECT |ANSWER✔✔-False



Serial |access |time |depends |on |the |current |position |of |the |read/write |mechanism |and |the |
position |of |the |target |data |item |in |the |storage |medium. |- |CORRECT |ANSWER✔✔-True



Storage |device |speed |is |called |____. |- |CORRECT |ANSWER✔✔-access |time



The |____, |a |newer |packaging |standard, |is |essentially |a |SIMM |with |independent |electrical |
contacts |on |both |sides |of |the |module. |- |CORRECT |ANSWER✔✔-double |inline |memory |module



The |physical |structure |of |a |storage |device's |read/write |mechanism |and |storage |medium |
determines |the |ways |in |which |data |can |be |accessed. |- |CORRECT |ANSWER✔✔-True



The |surface |area |allocated |to |store |on |a |bit |is |called |the |____. |- |CORRECT |ANSWER✔✔-areal |
density

, The |term |____ |describes |primary |storage |devices |that |are |implemented |as |microchips, |can |
read |and |write |with |equal |speed, |and |can |randomly |access |bytes, |words, |or |larger |data |units.
|- |CORRECT |ANSWER✔✔-RAM




Volatility |is |a |matter |of |degree |and |conditions. |- |CORRECT |ANSWER✔✔-True



Wait |states |increase |CPU |and |computer |system |performance. |- |CORRECT |ANSWER✔✔-False



____ |stores |each |bit |by |using |a |single |transistor |and |capacitor. |- |CORRECT |ANSWER✔✔-
Dynamic |RAM



A |storage |device |consists |of |a |read/write |mechanism |and |a(n) |- |CORRECT |ANSWER✔✔-storage
|medium




Each |refresh |operation |in |DRAM |is |called |a(n) |- |CORRECT |ANSWER✔✔-refresh |cycle



A(n) |____________________ |provides |the |interface |between |the |storage |device |and |system |
bus. |- |CORRECT |ANSWER✔✔-device |controller



A |____ |storage |device |stores |and |retrieves |data |items |in |a |linear, |or |sequential, |order. |- |
CORRECT |ANSWER✔✔-serial |access



Average |access |time |is |computed |under |the |assumption |that |two |consecutive |accesses |are |
sent |to |____________________ |locations. |- |CORRECT |ANSWER✔✔-random



Magnetic |disk |drives |have |an |advantage |over |SSDs |in |power |consumption. |- |CORRECT |
ANSWER✔✔-False