Lab - Report
Course Name : Electronic Device and Circuits Lab
Course Code : EEE12P4
Experiment No. : 01
Experiment Name : The study of diode characteristics.
Submitted to:
Submitted by:
Nasrin Akter
ID No :
Student of Computer Science & Engineering
(1st year & 2nd Semester)
, Name of the experiment: The study of diode characteristics.
Objective:
• To study the I-V characteristics of silicon p-n junction diodes.
Required Component and Instrument:
1. Diode (1pc)
2. Resistor (1K-ohm)
3. Digital multimeter
Theory:
A diode is a two terminal semiconductor device which allows current to flow
through it is only one direction. The symbol of diode is as follows:
Fig (1): symbol of diode
Current flows from anode to the cathode side:
P-type silicon: when an intrinsic silicon semiconductor is doped with Al
impurities. It becomes P-type. At thermal equilibrium
Po = NA and no = ni/NA
Po=hole concentration, no=electron concentration.
NA=acceptor atoms, intrinsic =ni=1.5×103 cm-3 (si)
N-type silicon: When an intrinsic silicon semiconductor is doped with P
(phosphorous) impurities it becomes n-type. At thermal equilibrium:
(no.= No and Po=ni2/ND.
Experimental Set Up:
At first we have to set the diode and resister into the breadboard and make a
series circuit. Then we have to connect the wears with sources. After that, we
have to find the expected values and make a graph for I-V characteristics.
Course Name : Electronic Device and Circuits Lab
Course Code : EEE12P4
Experiment No. : 01
Experiment Name : The study of diode characteristics.
Submitted to:
Submitted by:
Nasrin Akter
ID No :
Student of Computer Science & Engineering
(1st year & 2nd Semester)
, Name of the experiment: The study of diode characteristics.
Objective:
• To study the I-V characteristics of silicon p-n junction diodes.
Required Component and Instrument:
1. Diode (1pc)
2. Resistor (1K-ohm)
3. Digital multimeter
Theory:
A diode is a two terminal semiconductor device which allows current to flow
through it is only one direction. The symbol of diode is as follows:
Fig (1): symbol of diode
Current flows from anode to the cathode side:
P-type silicon: when an intrinsic silicon semiconductor is doped with Al
impurities. It becomes P-type. At thermal equilibrium
Po = NA and no = ni/NA
Po=hole concentration, no=electron concentration.
NA=acceptor atoms, intrinsic =ni=1.5×103 cm-3 (si)
N-type silicon: When an intrinsic silicon semiconductor is doped with P
(phosphorous) impurities it becomes n-type. At thermal equilibrium:
(no.= No and Po=ni2/ND.
Experimental Set Up:
At first we have to set the diode and resister into the breadboard and make a
series circuit. Then we have to connect the wears with sources. After that, we
have to find the expected values and make a graph for I-V characteristics.
