CPE 151-CMOS and VLSI design exam 1
UPDATED ACTUAL Exam Questions and
CORRECT Answers
MOSFET stand for: - CORRECT ANSWER - Metal Oxide Semiconductor Field Effect
Transistor
p-type semiconductor has ________ as majority charge carriers - CORRECT ANSWER -
holes
n-type semiconductor is built by doping intrinsic silicon with a group _______ element -
CORRECT ANSWER -V
When a voltage of 5V is applied to the Drain of an NMOS transistor, the transistor is: -
CORRECT ANSWER - Not enough information
When a voltage of 0V is applied to the gate of a PMOS, the transistor is: - CORRECT
ANSWER - on
a 3-input NAND gate has: - CORRECT ANSWER - 3 NMOS in series and 3 PMOS in
parallel
if the NMOS and PMOS transistors switch place in an inverter, the new circuit is a: - CORRECT
ANSWER - weak buffer
NMOS provides a good: - CORRECT ANSWER -0
to properly bias the Source-Bulk and Drain-Bulk diodes, the bulk terminal of a PMOS should be
connected to: - CORRECT ANSWER - Vdd
, Input dependent phase shift is brought about by the ________ transistor non-ideality. -
CORRECT ANSWER - Non-zero input resistance
Which circuit uses 2 NMOS and 2 PMOS all in series? - CORRECT ANSWER - Tri-state
inverter
in a Transmission gate, when the PMOS is on, the NMOS is: - CORRECT ANSWER - on
The condition for NMOS transistor to be on is - CORRECT ANSWER - Vgs >= Vth
the condition for NMOS to be in saturation is: - CORRECT ANSWER - Vds >= Vgs - Vth
The mobility of electrons is ________ than the mobility of holes. - CORRECT
ANSWER - greater
the relation between Q (charge), V (voltage), and C (capacitance) is: - CORRECT
ANSWER - Q = VC
identify a lateral field effect from:
a) subthreshold conduction
b) Mobility degredation
c) Body effect
d) Velocity saturation - CORRECT ANSWER - d) velocity saturation
identify a vertical field effect from:
a) subthreshold conduction
b) Mobility degredation
c) Body effect
d) Velocity saturation - CORRECT ANSWER - b) mobility degredation
UPDATED ACTUAL Exam Questions and
CORRECT Answers
MOSFET stand for: - CORRECT ANSWER - Metal Oxide Semiconductor Field Effect
Transistor
p-type semiconductor has ________ as majority charge carriers - CORRECT ANSWER -
holes
n-type semiconductor is built by doping intrinsic silicon with a group _______ element -
CORRECT ANSWER -V
When a voltage of 5V is applied to the Drain of an NMOS transistor, the transistor is: -
CORRECT ANSWER - Not enough information
When a voltage of 0V is applied to the gate of a PMOS, the transistor is: - CORRECT
ANSWER - on
a 3-input NAND gate has: - CORRECT ANSWER - 3 NMOS in series and 3 PMOS in
parallel
if the NMOS and PMOS transistors switch place in an inverter, the new circuit is a: - CORRECT
ANSWER - weak buffer
NMOS provides a good: - CORRECT ANSWER -0
to properly bias the Source-Bulk and Drain-Bulk diodes, the bulk terminal of a PMOS should be
connected to: - CORRECT ANSWER - Vdd
, Input dependent phase shift is brought about by the ________ transistor non-ideality. -
CORRECT ANSWER - Non-zero input resistance
Which circuit uses 2 NMOS and 2 PMOS all in series? - CORRECT ANSWER - Tri-state
inverter
in a Transmission gate, when the PMOS is on, the NMOS is: - CORRECT ANSWER - on
The condition for NMOS transistor to be on is - CORRECT ANSWER - Vgs >= Vth
the condition for NMOS to be in saturation is: - CORRECT ANSWER - Vds >= Vgs - Vth
The mobility of electrons is ________ than the mobility of holes. - CORRECT
ANSWER - greater
the relation between Q (charge), V (voltage), and C (capacitance) is: - CORRECT
ANSWER - Q = VC
identify a lateral field effect from:
a) subthreshold conduction
b) Mobility degredation
c) Body effect
d) Velocity saturation - CORRECT ANSWER - d) velocity saturation
identify a vertical field effect from:
a) subthreshold conduction
b) Mobility degredation
c) Body effect
d) Velocity saturation - CORRECT ANSWER - b) mobility degredation
