,Exam
Name
TRUE/FALSE.c Writec'T'cifc thec statementc isctruec andc'F'cifcthec statementc iscfalse.
1) Thectypicalc barrierc potentialcforc siliconc isc0.3c V. 1)c
2) Incthecquantumc modelc ofcthecatom,cancorbitalc iscac discretec energyclevelc wherecancelectronciscfound. 2)c
3) Siliconc dopedc withc impuritiesc isc usedc inc thec manufacturecofc semiconductorc devices. 3)c
4) Acp-typec semiconductorc hasc relativelyc fewc freec electrons. 4)c
5) Holecflowcoccurscinc thecconductionc band. 5)c
6) Thecvalencec bandc hasclowercenergycthanc hec conductionc band. 6)c
7) Thecenergycdifferencecbetweencthecvalencecbandcandcthecconductioncbandcincacsubstancecisccalledcth 7) c
ecthermalcgap.
MULTIPLEcCHOICE.c Choosec thec onecalternativec thatc bestc completesc thec statementc orc answersc thec question.
8) Holescarec thec majorityc carriersc in 8) c
A) ac p-typec semiconductor B)c ac pncjunctioncsemiconductor
C)c anc n-typec semiconductor D)c nonecofcthecabove
9) Siliconc andc germaniumc containc c valencecelectrons 9) c
A) eight B)c one C)cfour D)c two
10) Acsemiconductorciscsaidctocbec ac c typecofcmaterial 10) c
A) gaseous B)c liquid C)ccrystalline D)c metallic
11) Actrivalentcatomciscalsoccalled 11) c
A) acmetal B)c acdonor
C)c ancacceptor D)c acsemiconductor
12) Anc intrinsicc semiconductorchas 12) c
A) ancexcesscofcholes B)c ac largec numbercofcimpurities
C)c ancexcesscofcelectrons D)c nonecofcthecabove
13) Conductioncincthecconductioncbandcofc semiconductorsc iscbycthecmovementc of 13) c
A) holes B)c electrons
C)c bothcelectronsc andcholes D)c nonecofcthecabove
14) Thecprocesscofcacconductioncelectroncfallingcintocac holecisccalled 14) c
A) falling B)c ionization C)crecombination D)c merging
1
,15) Incac pnc junction,cthec layerscwherectherecarecfewc chargescnearc thecjunctioncisccalledcthe 15) c
A) valencec region B)c conductivec region
C)c depletionc region D)c boundarycregion
16) Thec majorityc carrierc inc ac p-typec semiconductorc is 16) c
A) holes B)c ions C)celectrons D)c protons
17) Thectypecofcchemicalc bondcthatcoccursc inccopperc is 17) c
A) covalent B)c ionic C)ccrystalline D)c metallic
18) Electronscorbitingcthecnucleusc ofcancatomcarec groupedcintocenergycbandsc knowncas 18) c
A) tracks B)c layers C)celevations D)c shells
19) Thec followingc arec allc semiconductorsc except 19) c
A) galliumc arsenide B)c copper
C)csilicon D)c germanium
20) Raisingcthec temperaturec ofc anc intrinsicc semiconductorc will 20) c
A) increasec freec electrons
B) thereciscnoceffectconcfreecelectrons
C) decreasec freec electrons
21) Thecenergycrequiredc toccausec ac valencec electronctocescapecfromcthec atom'scinfluencec isccalledc the 21) c
A) potentialc energy B)c ionizationc energy
C)cbreak-awaycenergy D)cfreecenergy
2
, AnswercKey
Testname:cUNTITLED1
1) FALSE
2) FALSE
3) TRUE
4) TRUE
5) FALSE
6) TRUE
7) FALSE
8) A
9) C
10) C
11) C
12) D
13) B
14) C
15) C
16) A
17) D
18) D
19) B
20) A
21) B
3
Name
TRUE/FALSE.c Writec'T'cifc thec statementc isctruec andc'F'cifcthec statementc iscfalse.
1) Thectypicalc barrierc potentialcforc siliconc isc0.3c V. 1)c
2) Incthecquantumc modelc ofcthecatom,cancorbitalc iscac discretec energyclevelc wherecancelectronciscfound. 2)c
3) Siliconc dopedc withc impuritiesc isc usedc inc thec manufacturecofc semiconductorc devices. 3)c
4) Acp-typec semiconductorc hasc relativelyc fewc freec electrons. 4)c
5) Holecflowcoccurscinc thecconductionc band. 5)c
6) Thecvalencec bandc hasclowercenergycthanc hec conductionc band. 6)c
7) Thecenergycdifferencecbetweencthecvalencecbandcandcthecconductioncbandcincacsubstancecisccalledcth 7) c
ecthermalcgap.
MULTIPLEcCHOICE.c Choosec thec onecalternativec thatc bestc completesc thec statementc orc answersc thec question.
8) Holescarec thec majorityc carriersc in 8) c
A) ac p-typec semiconductor B)c ac pncjunctioncsemiconductor
C)c anc n-typec semiconductor D)c nonecofcthecabove
9) Siliconc andc germaniumc containc c valencecelectrons 9) c
A) eight B)c one C)cfour D)c two
10) Acsemiconductorciscsaidctocbec ac c typecofcmaterial 10) c
A) gaseous B)c liquid C)ccrystalline D)c metallic
11) Actrivalentcatomciscalsoccalled 11) c
A) acmetal B)c acdonor
C)c ancacceptor D)c acsemiconductor
12) Anc intrinsicc semiconductorchas 12) c
A) ancexcesscofcholes B)c ac largec numbercofcimpurities
C)c ancexcesscofcelectrons D)c nonecofcthecabove
13) Conductioncincthecconductioncbandcofc semiconductorsc iscbycthecmovementc of 13) c
A) holes B)c electrons
C)c bothcelectronsc andcholes D)c nonecofcthecabove
14) Thecprocesscofcacconductioncelectroncfallingcintocac holecisccalled 14) c
A) falling B)c ionization C)crecombination D)c merging
1
,15) Incac pnc junction,cthec layerscwherectherecarecfewc chargescnearc thecjunctioncisccalledcthe 15) c
A) valencec region B)c conductivec region
C)c depletionc region D)c boundarycregion
16) Thec majorityc carrierc inc ac p-typec semiconductorc is 16) c
A) holes B)c ions C)celectrons D)c protons
17) Thectypecofcchemicalc bondcthatcoccursc inccopperc is 17) c
A) covalent B)c ionic C)ccrystalline D)c metallic
18) Electronscorbitingcthecnucleusc ofcancatomcarec groupedcintocenergycbandsc knowncas 18) c
A) tracks B)c layers C)celevations D)c shells
19) Thec followingc arec allc semiconductorsc except 19) c
A) galliumc arsenide B)c copper
C)csilicon D)c germanium
20) Raisingcthec temperaturec ofc anc intrinsicc semiconductorc will 20) c
A) increasec freec electrons
B) thereciscnoceffectconcfreecelectrons
C) decreasec freec electrons
21) Thecenergycrequiredc toccausec ac valencec electronctocescapecfromcthec atom'scinfluencec isccalledc the 21) c
A) potentialc energy B)c ionizationc energy
C)cbreak-awaycenergy D)cfreecenergy
2
, AnswercKey
Testname:cUNTITLED1
1) FALSE
2) FALSE
3) TRUE
4) TRUE
5) FALSE
6) TRUE
7) FALSE
8) A
9) C
10) C
11) C
12) D
13) B
14) C
15) C
16) A
17) D
18) D
19) B
20) A
21) B
3
