Electronic Devices and Nanotechnology
Topic 1-3:
Oxides and Oxide Insulation
Some material taken from: From May and Sze: Fundamentals of Semiconductor Fabrication
,Topic 1-3 - Oxides and oxide insulation
Topic 1 Topic 1
Silicon Wafer Oxidation
Manufacture
Topic 2/3
Photolithography
Topic 3
Etching
Topic 3 Topic 4
Diffusion Doping Epitaxial Growth
Topic 4 Topic 4
Ion Implantation Metallisation
Packaging
Topic 5
Microscopy
Scaling
,Thin films used in fabrication process for ICs
Many kinds of thin films used in IC fabrication
Gate and field oxides are grown by a thermal oxidation process
because only this process can provide the highest quality
with the lowest interface trap densities.
Schematic cross
section of a
(MOSFET)
MOSFET:
Metal-Oxide-
Semiconductor
Field-Effect
Transistor
, Uses of the oxides of silicon
Examples of the Uses of SiO2
Diffusion Barrier
• Much lower Boron and Phosphorus diffusion rates
occur in SiO2 than in Si.
• SiO2 can be used as a diffusion mask
Pad Oxide
• SiO2 relieves tensile stress of the Silicon Nitride
• It prevents stress induced Silicon defects.
Topic 1-3:
Oxides and Oxide Insulation
Some material taken from: From May and Sze: Fundamentals of Semiconductor Fabrication
,Topic 1-3 - Oxides and oxide insulation
Topic 1 Topic 1
Silicon Wafer Oxidation
Manufacture
Topic 2/3
Photolithography
Topic 3
Etching
Topic 3 Topic 4
Diffusion Doping Epitaxial Growth
Topic 4 Topic 4
Ion Implantation Metallisation
Packaging
Topic 5
Microscopy
Scaling
,Thin films used in fabrication process for ICs
Many kinds of thin films used in IC fabrication
Gate and field oxides are grown by a thermal oxidation process
because only this process can provide the highest quality
with the lowest interface trap densities.
Schematic cross
section of a
(MOSFET)
MOSFET:
Metal-Oxide-
Semiconductor
Field-Effect
Transistor
, Uses of the oxides of silicon
Examples of the Uses of SiO2
Diffusion Barrier
• Much lower Boron and Phosphorus diffusion rates
occur in SiO2 than in Si.
• SiO2 can be used as a diffusion mask
Pad Oxide
• SiO2 relieves tensile stress of the Silicon Nitride
• It prevents stress induced Silicon defects.