,Exam
Name
TRUE/FALSE.c Writec'T'cifc thec statementc isctruec andc'F'cifcthec statementc iscfalse.
1) Thec typicalc barrierc potentialc forc siliconc isc0.3c V. 1)c
2) Inc thecquantumc modelc ofc thecatom,canc orbitalc iscac discretec energyc levelc wherecancelectronc isc found. 2)c
3) Siliconc dopedc withc impuritiesc isc usedc inc thec manufacturec ofc semiconductorc devices. 3)c
4) Ac p-typec semiconductorc hasc relativelyc fewc freec electrons. 4)c
5) Holec flowc occursc incthec conductionc band. 5)c
6) Thec valencec bandc hasc lowercenergyc thanc hec conductionc band. 6)c
7) Thecenergycdifferencecbetweencthecvalencecbandcandcthecconductioncbandcincacsubstancecisccalledcth 7) c
ecthermalcgap.
MULTIPLEcCHOICE.c Choosec thec onecalternativec thatc bestc completesc thec statementc orc answersc thec question.
8) Holesc arec thec majorityc carriersc in 8) c
A) ac p-typec semiconductor B)c ac pncjunctioncsemiconductor
C)c anc n-typec semiconductor D)c nonecofcthecabove
9) Siliconc andc germaniumc containc c valencecelectrons 9) c
A) eight B)c one C)c four D)c two
10) Ac semiconductorc isc saidc toc bec ac ctypecofcmaterial 10) c
A) gaseous B)c liquid C)c crystalline D)c metallic
11) Ac trivalentcatomcisc alsoc called 11) c
A) acmetal B)c acdonor
C)c ancacceptor D)c ac semiconductor
12) Anc intrinsicc semiconductorc has 12) c
A) anc excessc ofc holes B)c ac largec numberc ofcimpurities
C)c anc excessc ofc electrons D)c nonecofcthecabove
13) Conductionc inc thecconductioncbandc ofc semiconductorsc iscbyc thec movementc of 13) c
A) holes B)c electrons
C)c bothcelectronsc andc holes D)c nonecofcthecabove
14) Thecprocessc ofc ac conductioncelectroncfallingc intocac holecisccalled 14) c
A) falling B)c ionization C)c recombination D)c merging
1
,15) Inc ac pnc junction,cthec layersc wherec therec arec fewc chargesc nearc thec junctionc isc calledc the 15) c
A) valencec region B)c conductivec region
C)c depletionc region D)c boundaryc region
16) Thec majorityc carrierc inc ac p-typec semiconductorc is 16) c
A) holes B)c ions C)c electrons D)c protons
17) Thec typec ofc chemicalc bondc thatc occursc inc copperc is 17) c
A) covalent B)c ionic C)c crystalline D)c metallic
18) Electronsc orbitingc thecnucleusc ofc ancatomcarec groupedc intoc energyc bandsc knowncas 18) c
A) tracks B)c layers C)c elevations D)c shells
19) Thec followingc arec allc semiconductorsc except 19) c
A) galliumc arsenide B)c copper
C)c silicon D)c germanium
20) Raisingc thec temperaturec ofc anc intrinsicc semiconductorc will 20) c
A) increasec freec electrons
B) therec iscnoceffectconcfreecelectrons
C) decreasec freec electrons
21) Thec energyc requiredc toc causec ac valencec electronc toc escapec fromc thec atom'sc influencec isccalledc the 21) c
A) potentialc energy B)c ionizationc energy
C)cbreak-awaycenergy D)cfreecenergy
2
, AnswercKey
Testname:cUNTITLED1
1) FALSE
2) FALSE
3) TRUE
4) TRUE
5) FALSE
6) TRUE
7) FALSE
8) A
9) C
10) C
11) C
12) D
13) B
14) C
15) C
16) A
17) D
18) D
19) B
20) A
21) B
3
Name
TRUE/FALSE.c Writec'T'cifc thec statementc isctruec andc'F'cifcthec statementc iscfalse.
1) Thec typicalc barrierc potentialc forc siliconc isc0.3c V. 1)c
2) Inc thecquantumc modelc ofc thecatom,canc orbitalc iscac discretec energyc levelc wherecancelectronc isc found. 2)c
3) Siliconc dopedc withc impuritiesc isc usedc inc thec manufacturec ofc semiconductorc devices. 3)c
4) Ac p-typec semiconductorc hasc relativelyc fewc freec electrons. 4)c
5) Holec flowc occursc incthec conductionc band. 5)c
6) Thec valencec bandc hasc lowercenergyc thanc hec conductionc band. 6)c
7) Thecenergycdifferencecbetweencthecvalencecbandcandcthecconductioncbandcincacsubstancecisccalledcth 7) c
ecthermalcgap.
MULTIPLEcCHOICE.c Choosec thec onecalternativec thatc bestc completesc thec statementc orc answersc thec question.
8) Holesc arec thec majorityc carriersc in 8) c
A) ac p-typec semiconductor B)c ac pncjunctioncsemiconductor
C)c anc n-typec semiconductor D)c nonecofcthecabove
9) Siliconc andc germaniumc containc c valencecelectrons 9) c
A) eight B)c one C)c four D)c two
10) Ac semiconductorc isc saidc toc bec ac ctypecofcmaterial 10) c
A) gaseous B)c liquid C)c crystalline D)c metallic
11) Ac trivalentcatomcisc alsoc called 11) c
A) acmetal B)c acdonor
C)c ancacceptor D)c ac semiconductor
12) Anc intrinsicc semiconductorc has 12) c
A) anc excessc ofc holes B)c ac largec numberc ofcimpurities
C)c anc excessc ofc electrons D)c nonecofcthecabove
13) Conductionc inc thecconductioncbandc ofc semiconductorsc iscbyc thec movementc of 13) c
A) holes B)c electrons
C)c bothcelectronsc andc holes D)c nonecofcthecabove
14) Thecprocessc ofc ac conductioncelectroncfallingc intocac holecisccalled 14) c
A) falling B)c ionization C)c recombination D)c merging
1
,15) Inc ac pnc junction,cthec layersc wherec therec arec fewc chargesc nearc thec junctionc isc calledc the 15) c
A) valencec region B)c conductivec region
C)c depletionc region D)c boundaryc region
16) Thec majorityc carrierc inc ac p-typec semiconductorc is 16) c
A) holes B)c ions C)c electrons D)c protons
17) Thec typec ofc chemicalc bondc thatc occursc inc copperc is 17) c
A) covalent B)c ionic C)c crystalline D)c metallic
18) Electronsc orbitingc thecnucleusc ofc ancatomcarec groupedc intoc energyc bandsc knowncas 18) c
A) tracks B)c layers C)c elevations D)c shells
19) Thec followingc arec allc semiconductorsc except 19) c
A) galliumc arsenide B)c copper
C)c silicon D)c germanium
20) Raisingc thec temperaturec ofc anc intrinsicc semiconductorc will 20) c
A) increasec freec electrons
B) therec iscnoceffectconcfreecelectrons
C) decreasec freec electrons
21) Thec energyc requiredc toc causec ac valencec electronc toc escapec fromc thec atom'sc influencec isccalledc the 21) c
A) potentialc energy B)c ionizationc energy
C)cbreak-awaycenergy D)cfreecenergy
2
, AnswercKey
Testname:cUNTITLED1
1) FALSE
2) FALSE
3) TRUE
4) TRUE
5) FALSE
6) TRUE
7) FALSE
8) A
9) C
10) C
11) C
12) D
13) B
14) C
15) C
16) A
17) D
18) D
19) B
20) A
21) B
3
