solid starc energies
conduction band : I desi energy, unoccupied at OK
Valence Gand : highest energy,
filled at ok
insulators have wide hand gaps, -
conductors have no hand gap Conduction Gand
-
Fermi...... 1 12 eva-
. -
landgap ....
- d
-
Valence
indirect semiconductors require a change in energy
andMomentum to more electrons
holes are the absence of an election
10
#elections per wood centilater of silico = 10 cms
at 300K (conduction
S
Gand, zero electrons In valence)
( M
n = elections
M
P
*
=
=
holes
effective mass
Mi = 4 81.
.
10's
Fermion : an drom with half integer spin
Pauli exclusion : One upward one downward spin per
energy level
,Fel Elit
=
= fermi Energy = 30% Chance
""
Un = 2 92
.
. 10 [ Ve = 603 (0) 194
UI mobility -
nP ni" (equilibrium)
=
Planks constant = 6 .
62 . 18-34
Adding impurities to silicon (oner elements) can
Change Its electrical characteristics.
Adding Clements new willaddllections will
create an N-type Lexcess elections
Adding elements that take electrons crate a
P-type Lexcess holes)
u E
a g
elections
.
-----
-t
noles
n-type
Prype
Prosinerus ( Beran)
, equilibrium
17
10
At book , silicon ni = 10 heavy 7/0
moderateN 10-16
N- + yPe : Light N 183-1p'
Intrinsic 100
No = doner dapms level light P it -10
IS
Na = accepting doping level moderate ? 20 197-
neart 07/0
No = No aleariliorium) e
Na = Po
Po = i no
nan-equilisium
h= Not An
P 10 + 19
=
holes move With Current, elections more against
concentration holes
of and elections are censed
diffusion
joiff = , 98 d
90 - Mar
25 9mr :
at 300K
J = J diff +I drift
recommention" When an election moves back to the
valence land
, & + ype P + 4pe
n = An No n= No PAPtNa PINA
+
Assumptions :
No carrier generation from external saises
Abrupt smet won chifam impurity dephs
Electric field for macrity carriersIn the Gull Is Zero
no generation In depiction region
LLi conditions
steady starte
I dimensieren
On = diffusion constant
On
-- np
↓n
= nPo + Anp(x)
= Average lifetime
Current
=
In +0 Voltage =
Uni-Vape
,On
Voi = /N varsa
Fundin
Bancy conditions :
Anp(-Xo)
& On (xp)
=
Proquap-
Pro
(
=
conduction band : I desi energy, unoccupied at OK
Valence Gand : highest energy,
filled at ok
insulators have wide hand gaps, -
conductors have no hand gap Conduction Gand
-
Fermi...... 1 12 eva-
. -
landgap ....
- d
-
Valence
indirect semiconductors require a change in energy
andMomentum to more electrons
holes are the absence of an election
10
#elections per wood centilater of silico = 10 cms
at 300K (conduction
S
Gand, zero electrons In valence)
( M
n = elections
M
P
*
=
=
holes
effective mass
Mi = 4 81.
.
10's
Fermion : an drom with half integer spin
Pauli exclusion : One upward one downward spin per
energy level
,Fel Elit
=
= fermi Energy = 30% Chance
""
Un = 2 92
.
. 10 [ Ve = 603 (0) 194
UI mobility -
nP ni" (equilibrium)
=
Planks constant = 6 .
62 . 18-34
Adding impurities to silicon (oner elements) can
Change Its electrical characteristics.
Adding Clements new willaddllections will
create an N-type Lexcess elections
Adding elements that take electrons crate a
P-type Lexcess holes)
u E
a g
elections
.
-----
-t
noles
n-type
Prype
Prosinerus ( Beran)
, equilibrium
17
10
At book , silicon ni = 10 heavy 7/0
moderateN 10-16
N- + yPe : Light N 183-1p'
Intrinsic 100
No = doner dapms level light P it -10
IS
Na = accepting doping level moderate ? 20 197-
neart 07/0
No = No aleariliorium) e
Na = Po
Po = i no
nan-equilisium
h= Not An
P 10 + 19
=
holes move With Current, elections more against
concentration holes
of and elections are censed
diffusion
joiff = , 98 d
90 - Mar
25 9mr :
at 300K
J = J diff +I drift
recommention" When an election moves back to the
valence land
, & + ype P + 4pe
n = An No n= No PAPtNa PINA
+
Assumptions :
No carrier generation from external saises
Abrupt smet won chifam impurity dephs
Electric field for macrity carriersIn the Gull Is Zero
no generation In depiction region
LLi conditions
steady starte
I dimensieren
On = diffusion constant
On
-- np
↓n
= nPo + Anp(x)
= Average lifetime
Current
=
In +0 Voltage =
Uni-Vape
,On
Voi = /N varsa
Fundin
Bancy conditions :
Anp(-Xo)
& On (xp)
=
Proquap-
Pro
(
=
