AE05 BASICgELECTRONICS
TYPICAL QUESTIONS & ANSWERS
g g g
PARTg-gI
OBJECTIVEgTYPEgQUESTIONS
EachgQuestiongcarriesg2gmarks.
Choosegcorrectgorgthegbestgalternativegingthegfollowing:
Q.1 Thegbreakdowngmechanismgingaglightlygdopedgp-ngjunctiongundergreversegbiasedgconditiongisgcalled
(A) avalanchegbreakdown.
(B) zenergbreakdown.
(C) breakdowngbygtunnelling.
(D) highgvoltagegbreakdown.
Ans:gA
Q.2 IngagCEg–gconnectedgtransistorgamplifiergwithgvoltageg–
ggaingAv,gthegcapacitancegCbcgisgamplifiedgbyg agfactor
(A) Av (B) 1g+gAv
(C) 1g+gAv (D)g Agv2
Ans:gB
Q.3 Forgaglargegvaluesgofg|VDS|,gagFETg–gbehavesgas
(A) Voltagegcontrolledgresistor.
(B) Currentgcontrolledgcurrentgsource.
(C) Voltagegcontrolledgcurrentgsource.
(D) Currentgcontrolledgresistor.
Ans:gC
Q.4 Removinggbypassgcapacitorgacrossgthegemitter-leggresistorgingagCEgamplifiergcauses
(A) increasegingcurrentggain. (B)gdecreasegingcurrentggain.
(C)g increasegingvoltageggain. (D)decreasegingvoltageggain.
Ans:gD
Q.5 Forgangop-ampghavinggdifferentialggaingAvgandgcommon-modeggaingAcgthegCMRRgisggivengby
(A) A v g +gAc (B)g Av
Ac
A Agc
(C) v g +g1g (D)
Ac Av
Ans:gB
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,AE05 BASICgELECTRONICS
Q.6 Whengagstep-inputgisggivengtogangop-ampgintegrator,gthegoutputgwillgbe
(A) agramp.
(B) agsinusoidalgwave.
(C) agrectangulargwave.
(D) agtriangulargwavegwithgdcgbias.
Ans:gA
Q.7 HysteresisgisgdesirablegingSchmitt-trigger,gbecause
(A) energygisgtogbegstored/dischargedgingparasiticgcapacitances.
(B) effectsgofgtemperaturegwouldgbegcompensated.
(C) devicesgingthegcircuitgshouldgbegallowedgtimegforgsaturationgandgdesaturation.
(D) itgwouldgpreventgnoisegfromgcausinggfalsegtriggering.
Ans:gC
Q.8 Ingagfull-wavegrectifiergwithoutgfilter,gthegripplegfactorgis
(A) 0.482 (B)g1.21
(C)g1.79 (D)g2.05
Ans:gA
Q.9 AgmintermgofgthegBoolean-function,gf(x,gy,gx)gis
(A) xg+g yg+gz (B) xgygz
(C) xgz (D)g(yg+z)gx
Ans:gB
Q.10 Thegminimumgnumbergofgflip-flopsgrequiredgtogconstructgagmod-75gcountergis
(A) 5 (B)g 6
(C)g7 (D)g8
Ans:gC
Q.11 Spacegchargegregiongaroundgagp-ngjunction
(A) doesgnotgcontaingmobilegcarriers
(B) containsgbothgfreegelectronsgandgholes
(C) containsgonegtypegofgmobilegcarriersgdependinggongtheglevelgofgdopinggofgthegpgorg
ngregions
(D) containsgelectronsgonlygasgfreegcarriers
Ans:gA
Q.12 Thegimportantgcharacteristicgofgemitter-followergis
(A) highginputgimpedancegandghighgoutputgimpedance
(B) highginputgimpedancegandglowgoutputgimpedance
(C) lowginputgimpedancegandglowgoutputgimpedance
(D) lowginputgimpedancegandghighgoutputgimpedance
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,AE05 BASICgELECTRONICS
Ans:gB
Q.13 IngagJFET,gatgpinch-offgvoltagegappliedgongtheggate
(A) thegdraingcurrentgbecomesgalmostgzero
(B) thegdraingcurrentgbeginsgtogdecrease
(C) thegdraingcurrentgisgalmostgatgsaturationgvalue.
(D) thegdrain-to-sourcegvoltagegisgclosegtogzerogvolts.
Ans:gC
Q.14 Whengangamplifiergisgprovidedgwithgcurrentgseriesgfeedback,gits
(A) inputgimpedancegincreasesgandgoutputgimpedancegdecreases
(B) inputgandgoutputgimpedancesgbothgdecrease
(C) inputgimpedancegdecreasesgandgoutputgimpedancegincreases
(D) inputgandgoutputgimpedancesgbothgincrease
Ans:gD
Q.15 Theg frequencyg ofg oscillationg ofg ag tunnel-
collectorg oscillatorg havingg L=g 30µHg andg Cg =g 300pfg isgnearby
(A) 267gkHz (B)g 1677gkHz
(C)g1.68gkHz (D)g 2.67gMHz
1 1
Ans:gB fog = = =g1677g.42gKHz
2 Lc 2
30 300 10 −1
Q.16 Thegopen-loopggaingofgangop-ampgavailablegingthegmarketgmaygbegaround.
(A) 10–1 (B)g 10
(C)g 105 (D)g 102
Ans:gC
Q.17 Theg controlg terminalg (pin5)g ofg 555g timerg ICg isg normallyg connectedg tog groundg throughg ag capacit
org(~g0.01µF).gThisgisgto
(A) protectgthegICgfromginadvertentgapplicationgofghighgvoltage
(B) preventgfalsegtriggeringgbygnoisegcoupledgontogthegpin
(C) convertgthegtriggerginputgtogsharpgpulsegbygdifferentiation
(D) suppressganygnegativegtriggeringgpulse
Ans:gB
Q.18 Thegvaluegofgripplegfactorgofgaghalf-wavegrectifiergwithoutgfiltergisgapproximately
(A) 1.2 (B)g 0.2
(C)g 2.2 (D)g 2.0
Ans:gA
Q.19 ThegthreegvariablegBooleangexpressiongxyg+gxyzg+g xgyg+gxgygz
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, AE05 BASICgELECTRONICS
(A) yg+gxz (B) xg+gyz
(C) yg+gxz (D) yg+gxz
Ans:gC
y(xg+gx)g+gxz(gyg+g y)g=g yg+gxz
Q.20 Thegfan-outgofgagMOS-logicggategisghighergthangthatgofgTTLggatesgbecausegofgits
(A) lowginputgimpedance (B)ghighgoutputgimpedance
(C)g lowgoutputgimpedance (D)ghighginputgimpedance
Ans:gD
Q.21 Ingangintrinsicgsemiconductor,gthegFermi-levelgis
(A) closergtogthegvalencegband
(B) midwaygbetweengconductiongandgvalencegband
(C) closergtogthegconductiongband
(D) withingthegvalencegband
Ans:gC
Q.22 Thegreverseg–gsaturationgcurrentgofgagsilicongdiode
(A) doublesgforgeveryg10Cgincreasegingtemperature
(B) doesgnotgchangegwithgtemperature
(C) halvesgforgeveryg1Cgdecreasegingtemperature
(D) increasesgbyg1.5gtimesgforgeveryg2Cgincrementgingtemperature
Ans:gA
Q.23 Thegcommongcollectorgamplifiergisgalsogknowngas
(A) collectorgfollower (B)g Basegfollower
(C)g Emittergfollower (D)g Sourcegfollower
Ans:gC
Q.24 Ingclass–Agamplifier,gthegoutputgcurrentgflowsgfor
(A) agpartgofgthegcyclegorgtheginputgsignal.
(B) thegfullgcyclegofgtheginputgsignal.
(C) halfgthegcyclegofgtheginputgsignal.
(D) 3/4thgofgthegcyclegofgtheginputgsignal.
Ans:gB
Q.25 Ingangamplifiergwithgnegativegfeedback
(A) onlygtheggaingofgthegamplifiergisgaffected
(B) onlygtheggaingandgbandwidthgofgthegamplifiergaregaffected
(C) onlygtheginputgandgoutputgimpedancesgaregaffected
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TYPICAL QUESTIONS & ANSWERS
g g g
PARTg-gI
OBJECTIVEgTYPEgQUESTIONS
EachgQuestiongcarriesg2gmarks.
Choosegcorrectgorgthegbestgalternativegingthegfollowing:
Q.1 Thegbreakdowngmechanismgingaglightlygdopedgp-ngjunctiongundergreversegbiasedgconditiongisgcalled
(A) avalanchegbreakdown.
(B) zenergbreakdown.
(C) breakdowngbygtunnelling.
(D) highgvoltagegbreakdown.
Ans:gA
Q.2 IngagCEg–gconnectedgtransistorgamplifiergwithgvoltageg–
ggaingAv,gthegcapacitancegCbcgisgamplifiedgbyg agfactor
(A) Av (B) 1g+gAv
(C) 1g+gAv (D)g Agv2
Ans:gB
Q.3 Forgaglargegvaluesgofg|VDS|,gagFETg–gbehavesgas
(A) Voltagegcontrolledgresistor.
(B) Currentgcontrolledgcurrentgsource.
(C) Voltagegcontrolledgcurrentgsource.
(D) Currentgcontrolledgresistor.
Ans:gC
Q.4 Removinggbypassgcapacitorgacrossgthegemitter-leggresistorgingagCEgamplifiergcauses
(A) increasegingcurrentggain. (B)gdecreasegingcurrentggain.
(C)g increasegingvoltageggain. (D)decreasegingvoltageggain.
Ans:gD
Q.5 Forgangop-ampghavinggdifferentialggaingAvgandgcommon-modeggaingAcgthegCMRRgisggivengby
(A) A v g +gAc (B)g Av
Ac
A Agc
(C) v g +g1g (D)
Ac Av
Ans:gB
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,AE05 BASICgELECTRONICS
Q.6 Whengagstep-inputgisggivengtogangop-ampgintegrator,gthegoutputgwillgbe
(A) agramp.
(B) agsinusoidalgwave.
(C) agrectangulargwave.
(D) agtriangulargwavegwithgdcgbias.
Ans:gA
Q.7 HysteresisgisgdesirablegingSchmitt-trigger,gbecause
(A) energygisgtogbegstored/dischargedgingparasiticgcapacitances.
(B) effectsgofgtemperaturegwouldgbegcompensated.
(C) devicesgingthegcircuitgshouldgbegallowedgtimegforgsaturationgandgdesaturation.
(D) itgwouldgpreventgnoisegfromgcausinggfalsegtriggering.
Ans:gC
Q.8 Ingagfull-wavegrectifiergwithoutgfilter,gthegripplegfactorgis
(A) 0.482 (B)g1.21
(C)g1.79 (D)g2.05
Ans:gA
Q.9 AgmintermgofgthegBoolean-function,gf(x,gy,gx)gis
(A) xg+g yg+gz (B) xgygz
(C) xgz (D)g(yg+z)gx
Ans:gB
Q.10 Thegminimumgnumbergofgflip-flopsgrequiredgtogconstructgagmod-75gcountergis
(A) 5 (B)g 6
(C)g7 (D)g8
Ans:gC
Q.11 Spacegchargegregiongaroundgagp-ngjunction
(A) doesgnotgcontaingmobilegcarriers
(B) containsgbothgfreegelectronsgandgholes
(C) containsgonegtypegofgmobilegcarriersgdependinggongtheglevelgofgdopinggofgthegpgorg
ngregions
(D) containsgelectronsgonlygasgfreegcarriers
Ans:gA
Q.12 Thegimportantgcharacteristicgofgemitter-followergis
(A) highginputgimpedancegandghighgoutputgimpedance
(B) highginputgimpedancegandglowgoutputgimpedance
(C) lowginputgimpedancegandglowgoutputgimpedance
(D) lowginputgimpedancegandghighgoutputgimpedance
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,AE05 BASICgELECTRONICS
Ans:gB
Q.13 IngagJFET,gatgpinch-offgvoltagegappliedgongtheggate
(A) thegdraingcurrentgbecomesgalmostgzero
(B) thegdraingcurrentgbeginsgtogdecrease
(C) thegdraingcurrentgisgalmostgatgsaturationgvalue.
(D) thegdrain-to-sourcegvoltagegisgclosegtogzerogvolts.
Ans:gC
Q.14 Whengangamplifiergisgprovidedgwithgcurrentgseriesgfeedback,gits
(A) inputgimpedancegincreasesgandgoutputgimpedancegdecreases
(B) inputgandgoutputgimpedancesgbothgdecrease
(C) inputgimpedancegdecreasesgandgoutputgimpedancegincreases
(D) inputgandgoutputgimpedancesgbothgincrease
Ans:gD
Q.15 Theg frequencyg ofg oscillationg ofg ag tunnel-
collectorg oscillatorg havingg L=g 30µHg andg Cg =g 300pfg isgnearby
(A) 267gkHz (B)g 1677gkHz
(C)g1.68gkHz (D)g 2.67gMHz
1 1
Ans:gB fog = = =g1677g.42gKHz
2 Lc 2
30 300 10 −1
Q.16 Thegopen-loopggaingofgangop-ampgavailablegingthegmarketgmaygbegaround.
(A) 10–1 (B)g 10
(C)g 105 (D)g 102
Ans:gC
Q.17 Theg controlg terminalg (pin5)g ofg 555g timerg ICg isg normallyg connectedg tog groundg throughg ag capacit
org(~g0.01µF).gThisgisgto
(A) protectgthegICgfromginadvertentgapplicationgofghighgvoltage
(B) preventgfalsegtriggeringgbygnoisegcoupledgontogthegpin
(C) convertgthegtriggerginputgtogsharpgpulsegbygdifferentiation
(D) suppressganygnegativegtriggeringgpulse
Ans:gB
Q.18 Thegvaluegofgripplegfactorgofgaghalf-wavegrectifiergwithoutgfiltergisgapproximately
(A) 1.2 (B)g 0.2
(C)g 2.2 (D)g 2.0
Ans:gA
Q.19 ThegthreegvariablegBooleangexpressiongxyg+gxyzg+g xgyg+gxgygz
3
, AE05 BASICgELECTRONICS
(A) yg+gxz (B) xg+gyz
(C) yg+gxz (D) yg+gxz
Ans:gC
y(xg+gx)g+gxz(gyg+g y)g=g yg+gxz
Q.20 Thegfan-outgofgagMOS-logicggategisghighergthangthatgofgTTLggatesgbecausegofgits
(A) lowginputgimpedance (B)ghighgoutputgimpedance
(C)g lowgoutputgimpedance (D)ghighginputgimpedance
Ans:gD
Q.21 Ingangintrinsicgsemiconductor,gthegFermi-levelgis
(A) closergtogthegvalencegband
(B) midwaygbetweengconductiongandgvalencegband
(C) closergtogthegconductiongband
(D) withingthegvalencegband
Ans:gC
Q.22 Thegreverseg–gsaturationgcurrentgofgagsilicongdiode
(A) doublesgforgeveryg10Cgincreasegingtemperature
(B) doesgnotgchangegwithgtemperature
(C) halvesgforgeveryg1Cgdecreasegingtemperature
(D) increasesgbyg1.5gtimesgforgeveryg2Cgincrementgingtemperature
Ans:gA
Q.23 Thegcommongcollectorgamplifiergisgalsogknowngas
(A) collectorgfollower (B)g Basegfollower
(C)g Emittergfollower (D)g Sourcegfollower
Ans:gC
Q.24 Ingclass–Agamplifier,gthegoutputgcurrentgflowsgfor
(A) agpartgofgthegcyclegorgtheginputgsignal.
(B) thegfullgcyclegofgtheginputgsignal.
(C) halfgthegcyclegofgtheginputgsignal.
(D) 3/4thgofgthegcyclegofgtheginputgsignal.
Ans:gB
Q.25 Ingangamplifiergwithgnegativegfeedback
(A) onlygtheggaingofgthegamplifiergisgaffected
(B) onlygtheggaingandgbandwidthgofgthegamplifiergaregaffected
(C) onlygtheginputgandgoutputgimpedancesgaregaffected
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