Notebook Paper to
Paperless
CONSTANTS
h 6 626 × 1534 Js
= .
C =
3 × 108 uls
Me ≈ Mu =
9 .
1531 kg
1×
1 36
× 15235 / K
{
= .
K
= 8 62× .
155 eU/ k X 300 = O
O
.
2586
lev = . 6 × 159 1 J 管 :
0 .
0259
q .
e = 1 6×
-
1019J
J
v =
f
kgmz/sz
=
ω= 2π
f
瓷 年
c =
f λ= 货 -
25
hC =
.78 9 0
×
pa
1
Ejuf ( Wave ) =
Eg =
hfo Ʃ KBT-
, BAND THEORY
rn
|
:free wat irafe
Conductance
Eondrction band Conduction ininmt
hntoe Noe " at T Ok
品
e in :
saund e [B
Valence band : e form i
o walent bond nisy brieiy nsrigig . nom . Baund
gap
↓
Ualence 海 VB
Filled wle
band
Iutriusic Extriusic
CB
Doping N type p type
-
-
i
grormpl Vdonoz) groupl Acceptoz ) Douor leve e
β
# of e ( u ) extra e frorn
U =
P U >7 P 以 << P chonmor
# of holes (p )
hole froun acceptow
↓
e crrzier bothn & p P Acceptor level 丘
Major u
Neutral charged UB 时
立
, BANID THEORY CONSTANTS
”
Fer mi
Emergy level Iutrinsic N P h 6 626 × 1534 Js
Type Type
_
-
= .
DAmvountofenergy that
add
to oa hew e to the CB C =
3 × 108 mls
EF
aysterm
Fermilevel EFi Me Mm = ≈ 9
. 1
× 1531 kg
2 ) 50 g% of possibilityofbeing EF
occupation by
e
VB 1 38
× 152351 K
{
=
am .
at that energy level K
= 8 62× 155 eU /
k
EF > EFi EF EFi
.
<
N =
ni Nd 3> Mi Na Mi
leV =
1 6
.
× 159 J
ErttgikTlmlEquaio
灯 ()
☆ Ex =
kTh 仁 vik
= m
川 : q ,
e = 1 6×
.
1019J
J =
kgmrlsi
otheruseful
Epn - EFi = kTlu
(]
tqus
KT / ( 器)
N
EFp -
EFi = -
m
.
《
, Notebook Paper to
Paperless
LECTURE 2
ELECTRONS & HOLES
COUALANT BOND
Form boudingbysharingvalance er
si Si
2 .
8 , 4 4 ,
8 ,
2
IONIC BOND
Form electrostatic force
by SEMICOND UCTORS
+
-
Conductions btwn metals & insuulontors
Na cr -
usually group 4dements
-
coupounolforunedfromcolume &U Elenlents
sillicon far
s by most
poyrular soun -
edemont
METALLE BOND mpound
CGalliumarsenide c ) used inhign speedopticalprsperties req
1
.
Form
by interactionbetween ion cores ethe
suroundng
free e ,
BAND GAP CENERGY BAND )
The gap pet ween Conductiou Baud & valeuce Band
Auti Form energy band
c
-
bondins
Paperless
CONSTANTS
h 6 626 × 1534 Js
= .
C =
3 × 108 uls
Me ≈ Mu =
9 .
1531 kg
1×
1 36
× 15235 / K
{
= .
K
= 8 62× .
155 eU/ k X 300 = O
O
.
2586
lev = . 6 × 159 1 J 管 :
0 .
0259
q .
e = 1 6×
-
1019J
J
v =
f
kgmz/sz
=
ω= 2π
f
瓷 年
c =
f λ= 货 -
25
hC =
.78 9 0
×
pa
1
Ejuf ( Wave ) =
Eg =
hfo Ʃ KBT-
, BAND THEORY
rn
|
:free wat irafe
Conductance
Eondrction band Conduction ininmt
hntoe Noe " at T Ok
品
e in :
saund e [B
Valence band : e form i
o walent bond nisy brieiy nsrigig . nom . Baund
gap
↓
Ualence 海 VB
Filled wle
band
Iutriusic Extriusic
CB
Doping N type p type
-
-
i
grormpl Vdonoz) groupl Acceptoz ) Douor leve e
β
# of e ( u ) extra e frorn
U =
P U >7 P 以 << P chonmor
# of holes (p )
hole froun acceptow
↓
e crrzier bothn & p P Acceptor level 丘
Major u
Neutral charged UB 时
立
, BANID THEORY CONSTANTS
”
Fer mi
Emergy level Iutrinsic N P h 6 626 × 1534 Js
Type Type
_
-
= .
DAmvountofenergy that
add
to oa hew e to the CB C =
3 × 108 mls
EF
aysterm
Fermilevel EFi Me Mm = ≈ 9
. 1
× 1531 kg
2 ) 50 g% of possibilityofbeing EF
occupation by
e
VB 1 38
× 152351 K
{
=
am .
at that energy level K
= 8 62× 155 eU /
k
EF > EFi EF EFi
.
<
N =
ni Nd 3> Mi Na Mi
leV =
1 6
.
× 159 J
ErttgikTlmlEquaio
灯 ()
☆ Ex =
kTh 仁 vik
= m
川 : q ,
e = 1 6×
.
1019J
J =
kgmrlsi
otheruseful
Epn - EFi = kTlu
(]
tqus
KT / ( 器)
N
EFp -
EFi = -
m
.
《
, Notebook Paper to
Paperless
LECTURE 2
ELECTRONS & HOLES
COUALANT BOND
Form boudingbysharingvalance er
si Si
2 .
8 , 4 4 ,
8 ,
2
IONIC BOND
Form electrostatic force
by SEMICOND UCTORS
+
-
Conductions btwn metals & insuulontors
Na cr -
usually group 4dements
-
coupounolforunedfromcolume &U Elenlents
sillicon far
s by most
poyrular soun -
edemont
METALLE BOND mpound
CGalliumarsenide c ) used inhign speedopticalprsperties req
1
.
Form
by interactionbetween ion cores ethe
suroundng
free e ,
BAND GAP CENERGY BAND )
The gap pet ween Conductiou Baud & valeuce Band
Auti Form energy band
c
-
bondins
