CPE 151-CMOS AND VLSI DESIGN
EXAM 1 QUESTIONS AND
ANSWERS
MOSFET stand for: - ANSWER Metal Oxide Semiconductor Field Effect
Transistor
p-type semiconductor has ________ as majority charge carriers - ANSWER
holes
n-type semiconductor is built by doping intrinsic silicon with a group _______
element - ANSWER V
When a voltage of 5V is applied to the Drain of an NMOS transistor, the
transistor is: - ANSWER Not enough information
When a voltage of 0V is applied to the gate of a PMOS, the transistor is: -
ANSWER on
a 3-input NAND gate has: - ANSWER 3 NMOS in series and 3 PMOS in
parallel
if the NMOS and PMOS transistors switch place in an inverter, the new circuit
is a: - ANSWER weak buffer
NMOS provides a good: - ANSWER 0
to properly bias the Source-Bulk and Drain-Bulk diodes, the bulk terminal of a
PMOS should be connected to: - ANSWER Vdd
Input dependent phase shift is brought about by the ________ transistor non-
ideality. - ANSWER Non-zero input resistance
EXAM 1 QUESTIONS AND
ANSWERS
MOSFET stand for: - ANSWER Metal Oxide Semiconductor Field Effect
Transistor
p-type semiconductor has ________ as majority charge carriers - ANSWER
holes
n-type semiconductor is built by doping intrinsic silicon with a group _______
element - ANSWER V
When a voltage of 5V is applied to the Drain of an NMOS transistor, the
transistor is: - ANSWER Not enough information
When a voltage of 0V is applied to the gate of a PMOS, the transistor is: -
ANSWER on
a 3-input NAND gate has: - ANSWER 3 NMOS in series and 3 PMOS in
parallel
if the NMOS and PMOS transistors switch place in an inverter, the new circuit
is a: - ANSWER weak buffer
NMOS provides a good: - ANSWER 0
to properly bias the Source-Bulk and Drain-Bulk diodes, the bulk terminal of a
PMOS should be connected to: - ANSWER Vdd
Input dependent phase shift is brought about by the ________ transistor non-
ideality. - ANSWER Non-zero input resistance
