, TEST BANK
Electronic Devices Conventional Current Version
10th Edition by Thomas L. Floyd
All Chapters 1-18
1.qIntroductionqtoqSemiconductorsq1
2.qDiodesqandqApplicationsq24
3.qSpecial-PurposeqDiodesq102
4.qBipolarqJunctionqTransistorsq163
5.qTransistorqBiasqCircuitsq216
6.qBJTqAmplifiersq255
7.qBJTqPowerqAmplifiersq319
8.qField-EffectqTransistorsq(FETs)q364
9.qFETqAmplifiersqandqSwitchingqCircuitsq434
10.qAmplifierqFrequencyqResponseq493
11.qThyristorsq552
12.qTheqOperationalqAmplifierq590
13.qBasicqOp-AmpqCircuitsq656
14.qSpecial-PurposeqIntegratedqCircuitsq707
15.qActiveqFiltersq753
16.qOscillatorsq796
1
,17.qVoltageqRegulatorsq841
18.qCommunicationqDevicesqandqMethodsq880
Exam
Name
TRUE/FALSE.q Writeq 'T'q ifq theq statementq isq trueq andq'F'q ifq theq statementq isq false.
1) Theqtypicalq barrierq potentialq forq siliconqisq0.3q V. 1)q
2) Inqtheqquantumq modelq ofq theqatom,qanqorbitalq isqaqdiscreteq energyqlevelq whereqanqelectronqisqfound. 2)q
3) Siliconq dopedq withq impuritiesq isq usedq inq theq manufactureq ofq semiconductorq devices. 3)q
4) Aqp-typeq semiconductorq hasq relativelyq fewq freeq electrons. 4)q
5) Holeqflowqoccursqinqtheqconductionq band. 5)q
6) Theqvalenceq bandq hasqlowerq energyqthanq heq conductionq band. 6)q
7) Theqenergyqdifferenceqbetweenqtheqvalenceqbandqandqtheqconductionqbandqinqaqsubstanceqisqcalledqtheqthe 7) q
rmalqgap.
MULTIPLEq CHOICE.q Chooseq theq oneq alternativeq thatq bestq completesq theq statementq orq answersq theq question.
8) Holesq areq theq majorityq carriersq in 8) q
A) aq p-typeq semiconductor B)q aq pnqjunctionqsemiconductor
C)q anqn-typeqsemiconductor D)q noneqofqtheqabove
9) Siliconq andq germaniumq containq q valenceqelectrons 9) q
A) eight B)q one C)qfour D)q two
10) Aqsemiconductorqisqsaidqtoqbeqaq qtypeqofqmaterial 10) q
A) gaseous B)q liquid C)qcrystalline D)q metallic
11) Aqtrivalentqatomqisqalsoqcalled C)q anqac
A) aqmetal B)q aqdonor ceptor
2
, 11) q
12) Anq intrinsicq semiconductorq has 12) q
A) anqexcessqofqholes B)q aq largeq numberqofqimpurities
C)q anqexcessqofqelectrons D)q noneqofqtheqabove
13) Conductionqinqtheqconductionq bandqofq semiconductorsq isqbyqtheqmovementq of 13) q
A) holes B)q electrons
C)q bothqelectronsqandqholes D)q noneqofqtheqabove
14) Theqprocessqofq aqconductionqelectronqfallingqintoqaq holeqisqcalled 14) q
A) falling B)q ionization C)qrecombination D)q merging
3
Electronic Devices Conventional Current Version
10th Edition by Thomas L. Floyd
All Chapters 1-18
1.qIntroductionqtoqSemiconductorsq1
2.qDiodesqandqApplicationsq24
3.qSpecial-PurposeqDiodesq102
4.qBipolarqJunctionqTransistorsq163
5.qTransistorqBiasqCircuitsq216
6.qBJTqAmplifiersq255
7.qBJTqPowerqAmplifiersq319
8.qField-EffectqTransistorsq(FETs)q364
9.qFETqAmplifiersqandqSwitchingqCircuitsq434
10.qAmplifierqFrequencyqResponseq493
11.qThyristorsq552
12.qTheqOperationalqAmplifierq590
13.qBasicqOp-AmpqCircuitsq656
14.qSpecial-PurposeqIntegratedqCircuitsq707
15.qActiveqFiltersq753
16.qOscillatorsq796
1
,17.qVoltageqRegulatorsq841
18.qCommunicationqDevicesqandqMethodsq880
Exam
Name
TRUE/FALSE.q Writeq 'T'q ifq theq statementq isq trueq andq'F'q ifq theq statementq isq false.
1) Theqtypicalq barrierq potentialq forq siliconqisq0.3q V. 1)q
2) Inqtheqquantumq modelq ofq theqatom,qanqorbitalq isqaqdiscreteq energyqlevelq whereqanqelectronqisqfound. 2)q
3) Siliconq dopedq withq impuritiesq isq usedq inq theq manufactureq ofq semiconductorq devices. 3)q
4) Aqp-typeq semiconductorq hasq relativelyq fewq freeq electrons. 4)q
5) Holeqflowqoccursqinqtheqconductionq band. 5)q
6) Theqvalenceq bandq hasqlowerq energyqthanq heq conductionq band. 6)q
7) Theqenergyqdifferenceqbetweenqtheqvalenceqbandqandqtheqconductionqbandqinqaqsubstanceqisqcalledqtheqthe 7) q
rmalqgap.
MULTIPLEq CHOICE.q Chooseq theq oneq alternativeq thatq bestq completesq theq statementq orq answersq theq question.
8) Holesq areq theq majorityq carriersq in 8) q
A) aq p-typeq semiconductor B)q aq pnqjunctionqsemiconductor
C)q anqn-typeqsemiconductor D)q noneqofqtheqabove
9) Siliconq andq germaniumq containq q valenceqelectrons 9) q
A) eight B)q one C)qfour D)q two
10) Aqsemiconductorqisqsaidqtoqbeqaq qtypeqofqmaterial 10) q
A) gaseous B)q liquid C)qcrystalline D)q metallic
11) Aqtrivalentqatomqisqalsoqcalled C)q anqac
A) aqmetal B)q aqdonor ceptor
2
, 11) q
12) Anq intrinsicq semiconductorq has 12) q
A) anqexcessqofqholes B)q aq largeq numberqofqimpurities
C)q anqexcessqofqelectrons D)q noneqofqtheqabove
13) Conductionqinqtheqconductionq bandqofq semiconductorsq isqbyqtheqmovementq of 13) q
A) holes B)q electrons
C)q bothqelectronsqandqholes D)q noneqofqtheqabove
14) Theqprocessqofq aqconductionqelectronqfallingqintoqaq holeqisqcalled 14) q
A) falling B)q ionization C)qrecombination D)q merging
3
